(Invited) Vertical GaN Devices Enabled By Selective Area P-Type DopingAndrew D. Koehler,Travis J. Anderson,Anindya Nath,Alan G. Jacobs,Marko J. Tadjer,Boris N. Feigelson,Mark Goorsky,Karl D. Hobart,Francis J KubMeeting abstracts(2017)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要