A new FDSOI spin qubit platform with 40nm effective control pitch

T. Bedecarrats,B. Cardoso Paz,B. Martinez Diaz, H. Niebojewski, B. Bertrand, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez,J.-M. Hartmann,Y. Morand, A. Magalhaes-Lucas,E. Nowak,E. Catapano, M. Casse,M. Urdampilleta,Y.-M. Niquet, F. Gaillard,S. De Franceschi,T. Meunier,M. Vinet

2021 IEEE International Electron Devices Meeting (IEDM)（2021）

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摘要

Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.

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关键词

1D FDSOI QD arrays,aggressive gate pitch,cryogenic temperature,effective control pitch,effective gate pitch,exchange interaction,FDSOI spin qubit platform,homogeneous ultra-dense structures,QD chemical potential,quantum dot chemical potential,Si/int,silicon quantum device integration,silicon quantum dot arrays,size 40.0 nm,statistical electrical characterisation,temperature 300 K,tunnel barriers,tunnel-coupling control

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