High-energy x-ray photoelectron spectroscopy spectra of HfO2 measured by Cr K alpha

Hafnium oxide (HfO2) grown by atomic layer deposition on Si was analyzed using high-resolution high-energy x-ray photoelectron spectroscopy (HAXPES). The HAXPES spectra of HfO2 obtained using monochromatic Cr K alpha radiation at 5414.8 eV include two survey scans (Al K alpha and Cr K alpha) and high-resolution spectra of Hf 3s, Hf 3p(3/2), Hf 3d(5/2), Hf 4p(3/2,) Hf 4d, Hf 4f, Hf 4s, and O 1s.