Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol. 35 065009)Archit Dhingra,Pavlo V Galiy,Lu Wang,Nataliia S Vorobeva,Alexey Lipatov,Angel Torres,Taras M Nenchuk,Simeon J Gilbert,Alexander Sinitskii,Andrew J Yost,Wai-Ning Mei,Keisuke Fukutani,Jia-Shiang Chen,Peter A DowbenSemiconductor Science and Technology（2021）引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
