Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 CyclesAva Jiang Tan,Yu-Hung Liao,Li-Chen Wang,Nirmaan Shanker,Jong-Ho Bae,Chenming Hu,Sayeef SalahuddinIEEE Electron Device Letters(2021)引用 0|浏览8暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要