Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold SwingChen Yang,Houqiang Fu,Prudhvi Peri,Kai Fu,Tsung-Han Yang,Jingan Zhou,Jossue Montes,David J. Smith,Yuji ZhaoIEEE Electron Device Letters(2021)引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要