Plasma-free Anisotropic Etching of GaN

Clarence Y. Chan,Shunya Namiki,Jennifer K. Hite,Xiuling Li

Conference on Lasers and Electro-Optics（2021）

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摘要

We demonstrate doping and growth dependent photo-enhanced metal -assisted chemical etching of homoepitaxial n-UaN on HVPE GaN substrates. Etch rate is comparable to or better than using RIE and there is no degradation of band-edge emission.

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关键词

plasma-free anisotropic etching,growth dependent photo-enhanced metal-assisted chemical etching,homoepitaxial n-GaN,HVPE GaN substrates,etch rate,GaN

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