Erratum: “Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs” [AIP Adv. 11, 075027 (2021)]Li-E. Cai,Chao-Zhi Xu,Fei-Bing Xiong,Ming-Jie Zhao,Hai-Feng Lin,Hong-Yi Lin,Dong SunAIP Advances（2021）引用 0|浏览2暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
