Investigation of resistive switching in Ag/Ge/Si(001) stack by conductive atomic force microscopy

V A Vorontsov,D A Antonov, A V Kruglov, I N Antonov, M E Shenina,V E Kotomina,V G Shengurov,S A Denisov,V Yu Chalkov,D A Pavlov, D O Filatov,O N Gorshkov

Journal of Physics: Conference Series（2021）

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摘要

Abstract We report on an experimental study of resistive switching (RS) of individual dislocations in Ag/Ge/Si(001) memristors by combined grazing incidence ion sputtering of the Ag electrodes and application of Conductive Atomic Force Microscopy to provide an electrical contact to individual Ag-filled dislocations in the Ge layer. Two types of RS were observed corresponding to two different RS mechanisms: (i) drift of Ag+ ions inside the dislocation cores and (ii) RedOx reactions in residual GeO x in the etch pits on the Ge layer surface.

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