>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

David Moor,Joel Winiger,Ping Ma,Andreas Messner,Bertold Ian Bitachon,Stefan Abel,Felix Eltes,Jean Fompeyrine,Juerg Leuthold

Frontiers in Optics + Laser Science 2021（2021）

引用 1|浏览3

暂无评分

摘要

A ferroelectric, metal-oxide-semiconductor (MOS) based, hybrid-plasmonic modulator is shown to feature bandwidths of >150 GHz and is tested with 32 Gbit/s NRZ. The device is relying on BaTiO 3 -on-SOI and potentially offers CMOS compatibility.

查看译文

关键词

ghz,hybrid-plasmonic,on-soi

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

&gt;150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration

>150 GHz Hybrid-Plasmonic BaTiO3-On-SOI Modulator for CMOS Foundry Integration