Fundamental Phenomena in Nanoscale Semiconductor Devices

Sub-Micron Semiconductor Devices(2022)

引用 0|浏览0
暂无评分
摘要
Intriguing phenomenon at nanoscale is likely to be an entirely new world, in which the intrinsic properties of semiconductors significantly depend on the geometries of the tailored architectures. This offers an attractive means of influencing the developed system, leading to the formation of novel physical properties. In particular, the exquisite properties of matter at the nanoscale enable the rise of new features that cannot be observed in macroscopic geometries. On the other hand, importantly, the quantum properties of materials and electronic devices cannot be ignored. Thus, understanding the fundamental properties of nanoscale devices is unavoidable for designing advanced, efficient, and high-responsive instruments with unique photonic and electronic characteristics. To exploit nanoscale features in the implementation of practical tools, a better understanding basis of the electronic interactions and the photonic interactions must be provided. This chapter falls into four major categories: introduction to nanoscale, nanodevices and short channel effects, quantum confinement effects explained about quantum confined structures, and electron states and density of states explained about surface states and Fermi level pinning.
更多
查看译文
关键词
nanoscale semiconductor devices,semiconductor devices
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要