The interface trap analysis of AlGaN/GaN high electron mobility transistors with temperature based on conductance method

Abstract In this paper, the characteristics of AlGaN/GaN high electron mobility transistors were tested and analyzed at high temperature. The experimental temperature range was 25~500°C. Frequency-dependent capacitance and conductance were adopted to investigate high temperature characteristics of interface trap. Results show that there is a kind of trap at the device interface. The trap density and time constant are (8.41×1010~1.40×1011)eV-1cm2/(0.398~0.636)μS and (1..03×1011~1.15×1011)eV-1cm2/(0.455~0.532)μS at different voltages and temperatures. With the increase of temperature, the trap density and time constant increase. High density interface traps are one of the reasons why device characteristics deteriorate with increasing temperature.