Investigation of Random Telegraph Noise under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash

Xinlei Jia,Lei Jin,Wen Zhou,Jianwei Lu,Salvatore M. Amoroso,Andrew R. Brown,Ko-Hsin Lee,Plamen Asenov,Xi-Wei Lin,Hongtao Liu,An Zhang,Zongliang Huo

IEEE ELECTRON DEVICE LETTERS（2022）

Cited 9|Views27

Key words

Three-dimensional displays,Flash memories,Logic gates,Electron traps,Solid modeling,Market research,Tail,RTN,fringing filed,random discrete nitride trapped charges,percolation current path,charge-trap-based 3D NAND flash

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