Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with H-Bn Dielectric.
ACS Applied Materials & Interfaces（2022）
关键词
multilayer MoS2 transistors,double gate,coupling effects,electrostatically controllable channel-thickness,I-on/I-off ratio,low-frequency (LF) noise,series resistance and carrier mobility
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