Enhanced Electrical Performance and Low Frequency Noise of In2O3 Thin-Film Transistors Using Al2O3/CeGdOx Bilayer Gate Dielectrics
IEEE Transactions on Electron Devices(2022)
摘要
This work reports gadolinium-doped cerium oxide (CeO
2
) as gate dielectric, and appropriate doping of Gd can effectively prevent oxygen vacancy-related defects in CeO
2
thin films. Atomic layer deposition (ALD)-derived 3 nm Al
2
O
3
passivation layer on CeGdO
x
has the advantage of further reducing the leakage current of CeGdO
x
MOS capacitors due to the wide bandgap and compactness of Al
2
O
3
. Then, Al
2
O
3
/CeGdO
x
bilayer dielectric-based In
2
O
3
thin-film transistors (TFTs) are constructed; electrical performances are systematically explored under the effect of Gd doping compared with pristine Al
2
O
3
/CeO
2
-gated TFT. Al
2
O
3
/CeGdO
x
(30 at% Gd) TFT demonstrates high performances with
${I}_{\text {ON}}/{I}_{\text {OFF}}$
ratio of 1.45
$\times 10^{{7}}$
, saturation mobility of 27.28 cm
2
/V
$\cdot $
s, subthreshold swing (SS) of 0.091 V/decade, interfacial trap states of
$1.64\times 10^{{11}}$
cm
−2
, as well as remarkable positive bias stress (PBS) stability. Low-frequency noise (LFN) together with X-ray photoelectron spectroscopy (XPS) illustrates that Gd doping in CeO
2
contributes to the reduction of interface trap density, improving electrical performance. Moreover, a resistor-loading inverter based on Al
2
O
3
/CeGdO
x
-gated TFT exhibits superior voltage transfer characteristics (VTC) with a voltage gain of 16 at 5 V, demonstrating the potential application of Al
2
O
3
/CeGdO
x
-based TFTs for future digital circuits.
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关键词
CeGdOₓ,inverter,low frequency noise (LFN),passivation,thin film transistor (TFT)
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