Characterization and Analysis of 4H-SiC Super Junction JFETs Fabricated by Sidewall Implantation

Ce Wang,Hengyu Wang,Baozhu Wang,Haoyuan Cheng,Kuang Sheng

IEEE Transactions on Electron Devices（2022）

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摘要

Silicon carbide (SiC) super junction (SJ) JFETs fabricated by sidewall implantation with different mesa-widths (MWs) and termination designs are characterized in this article. The device with an MW of $1.8 \mu \text{m}$ and active area of 0.104 mm2 achieves a breakdown voltage of 1086 V and a specific ON-resistance...

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关键词

Logic gates,JFETs,Silicon carbide,Breakdown voltage,Leakage currents,Electric breakdown,Voltage measurement

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