Terahertz Monolithic Integrated Cavity Filter Based on SiC Substrate

2021 IEEE MTT-S International Wireless Symposium (IWS)(2021)

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摘要
In this paper, a terahertz integrated cavity band-pass filter (ICF) based on silicon carbide (SiC) has been proposed. The cascade triplet (CT) topology and over-moded cavity has been utilized to implement out-of-band suppression. Measurement showed that at the center frequency of 185GHz, insertion loss of the ICF is only 1.55dB, with a relative bandwidth of 9.7%. Two transmission zeros (TZs) has been produced, achieving the suppression of the upper side-band of higher than 40dB. Compared with a traditional cavity filter, the ICF is only one-thousandth of the volume with providing similar electric performance and better integration.
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关键词
Silicon carbide,integrated cavity,terahertz monolithic integrated circuit,Band-pass filter
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