SiGe Based LNA for Data Communication Applications at 211 GHz

H. Ghanem, S. Lepilliet,D. Gloria, F. Danneville,G. Ducournau

2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ)（2021）

引用 1|浏览0

暂无评分

摘要

We report the use of a silicon based 211 GHz pre-amplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.

查看译文

关键词

input power,system margin,BER curve,amplifier gain,next-generation wireless communication systems,SiGe based LNA,data communication applications,THz links,test bench setup,uni-traveling-carrier photodiode,UTC-PD,bit error rate curve,leveraging industrial silicon technologies,silicon based preamplifier,modulated signal,silicon based active stage,frequency 211.0 GHz,SiGe

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要