Optical Gates Based on Semiconductor Quantum Wells A $${}_{\mathbf{3}}$$ B $${}_{\mathbf{5}}$$

N. N. Rubtsova,A. A. Kovalev, D. Ledovskikh,V. V. Preobrazhenskii,M. A. Putyato,B. R. Semyagin

Optoelectronics, Instrumentation and Data Processing（2022）

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摘要

The influence of the structure of quantum wells and the features of their manufacturing technology on the performance and maximum modulation depth of optical gates based on quantum wells A $${}_{3}$$ B $${}_{5}$$ , designed for mode locking of near-IR lasers, is analyzed.

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关键词

quantum wells, excitonic absorption in quantum wells, electron–hole recombination, charge carrier tunneling between quantum wells

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