RTS noise in semiconductor devices: time constants estimates and observation window analysis

We obtained a semi-analytical treatment considering estimators for the variance and variance of variance for the RTS noise as a function of the time observation. Our method also suggests a way to experimentally determine the constants of capture and emission in the case of a dominant trap and universal behaviors for the superposition from many traps. We present detailed closed-form expressions corroborated by MC simulations. We are sure to have an important tool to guide developers in building and analyzing low-frequency noise in semiconductor devices.