A review of quantum transport in field-effect transistors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY(2022)
摘要
Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the methods of treament through various approaches to quantum transport.
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关键词
FETs, transport, quantum effects, simulations
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