A Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction Applied to Single Stage Low Noise Amplifier

This article consists of two research parts. The first one presents results of calculation and optimization of Angelov model parameters compared to the experimental values of the intrinsic elements and the I ds –V ds model of a Gaussian signal transistor HEMT. The device has two fingers gate of 0.25 mm of each one. The gate width is also equal to 0.5 mm and the gate length is of 0.5 μm. The calculation and optimization of Angelov model parameters show that obtained results, give a good agreement with the experimental values, as well as for the large-signal validation of the HEMT/GaN transistor. These parameters can be implemented on microwave various simulators as such ADS Software. The second part consists of using this large-signal transistor in the design of a low noise amplifier at 3 GHz (S-band). Its power maximum output P out equal to 36.16 dBm for the voltages V ds = 30 V and V gs = − 3.5 V, in AB class amplifier configuration. The results of the amplifier summarized as a noise factor of 1.11 dB, and a stability factor of 1.03 that show a good agreement with the literature.