Soft-Error-Aware Read-Stability-Enhanced Low-Power 12T SRAM With Multi-Node Upset Recoverability for Aerospace Applications

With the advancement of technology, the size of transistors and the distance between them are reducing rapidly. Therefore, the critical charge of sensitive nodes is reducing, making SRAM cells, used for aerospace applications, more vulnerable to soft-error. If a radiation particle strikes a sensitive node of the standard 6T SRAM cell, the stored data in the cell are flipped, causing a single-event...