Ge-Sb-Se AMORPHOUS CHALCOGENIDE BASED PLASMONIC PLANAR WAVEGUIDES FOR OPTICAL MEMORIES APPLICATIONS

This paper presents a theoretical analysis of Ge28.1Sb6.3Se65.6 amorphous chalcogenide glass planar waveguides for optical memories applications. Also, surface plasmon resonance in Kretschmann configuration is studied for a multilayer configuration containing an amorphous chalcogenide film of Ge28.1Sb6.3Se65.6. The resonance curves of plasmonic structure containing Metal-Dielectric interface deposited on thermal oxidized silicon were investigated numerically. The reflectivity curves demonstrate sharp and very narrow plasmonic resonance with full-width half-maximum (FWHM) of 0.43 divided by 0.85 degrees. Simulations could be used for the design of optical memory devices.