Photoluminescence study of GaAs nanowires with and without AlGaAs Shell
OPTOELECTRONIC MATERIALS AND DEVICES (ICOMD 2020)(2021)
摘要
Photoluminescence of GaAs nanowires with and without AlGaAs Shell were analyzed detailly through temperature- and power-dependent photoluminescence spectroscopy. AlGaAs shell effectively eliminated the surface dangling bonds and defects caused by oxidation of GaAs surface. And a model of sub-bandgap absorption based on inhomogeneities in GaAs bandgap were applied to analyzed the "high energy tail" of GaAs nanowires with AlGaAs shell.
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关键词
GaAs nanowires, GaAs/AlGaAs nanowires, Photoluminescence
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