Vertical nanowire/nanosheet FETs with a horizontal channel for threshold voltage modulation

A new type of vertical nanowire (VNW)/nanosheet (VNS) FETs combining a horizontal channel (HC) with bulk/backgate electrode configuration, including Bulk-HC and FD-SOI-HC VNWFET, is proposed and investigated by TCAD simulation. Comparisons were carried out between conventional VNWFET and the proposed devices. FD-SOI-HC VNWFET exhibits better I-on/I(off )ratio and DIBL than Bulk-HC VNWFET. The impact of channel doping and geometric parameters on the electrical characteristic and body factor (gamma) of the devices was investigated. Moreover, threshold voltage modulation by bulk/back-gate bias was implemented and a large gamma is achieved for wide range V-th modulation. In addition, results of I-on enhancement and I-off reduction indicate the proposed devices are promising candidates for performance and power optimization of NW/NS circuits by adopting dynamic threshold voltage management. The results of preliminary experimental data are discussed as well.