High efficiency polishing of silicon carbide by applying reactive non-aqueous fluids to fixed abrasive pads

In pursuing high precision and high-quality surface of silicon carbide (SiC) substrates for electronic applications, however, the processing efficiency on Si-face has long been a difficult challenge compared to that of the C-face. Conventional polishing slurries are aqueous-based due to its unparalleled compatibility with most of chemical reagents, and have been widely studied and well understood. The chemical reactivity of all added accelerating agents in aqueous polishing systems is constrained by the prevalent presence of water as a solvent. On the other hand, non-aqueous polishing systems have not been well explored. In this report, reactive non-aqueous organic systems containing polar hydroxyl groups are evaluated as a high efficiency processing vehicle for Si-face polishing of SiC on fixed abrasive pads (FAPs). The surface quality of SiC is surprisingly improved while the polishing efficiency is accelerated on a diamond FAP in presence of methanol compared to those using water, and are further improved when organic acids are introduced to the reactive non-aqueous fluids. Contact angle measurement and X-ray photoelectron spectroscopy (XPS) analysis on the polished SiC surface are completed to assist us to shed light on the removal behavior and to explore and elucidate the removal mechanism of nonaqueous system fluids on FAPs. The initial positive results from this reactive non-aqueous polishing system serves our community as a promising approach for the ultra-precision polishing on other hard-to-process semiconductor and ceramic materials.