High-Frequency Resonance Magnetoelectric Effect in the FeCoSiB–AlN Structure on a Dielectric Substrate

The high-frequency magnetoelectric effect is found in a planar structure consisting of a ferromagnetic FeCoSiB layer and a piezoelectric AlN layer deposited by magnetron sputtering on a borosilicate glass substrate. The structure has been excited by a magnetic field at the frequency of the thickness acoustic vibration mode (32.4 MHz), and the electric voltage generated by the piezoelectric layer was recorded. The magnetoelectric conversion factor at the frequency of the second bulk mode is α E ≈ 6 V/A at a dc bias magnetic field of 120 A/m corresponding to the maximum piezomagnetic constant of the ferromagnetic layer.