Investigation on the relationship between dislocation type and the annihilation mechanism of GaN-on-Si

Materials Letters(2022)

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摘要
•Relationship between dislocation annihilation and dislocation type is revealed.•The cause of almost no annihilation of edge dislocations is explained.•Reason for the failure of AlGaN and AlN layers to block dislocations is given.
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关键词
Dislocation type,Annihilation mechanism,Crystal growth,Chemical vapour deposition
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