Surface-potential-based drain current model for two-dimensional organic TFTs using the multiple trapping and release conduction theory

Solid-State Electronics(2022)

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摘要
•Surface-potential-based drain current model for two-dimensional confined conduction.•The model using the carrier multiple trapping and release conduction theory.•Description of the Arrhenius temperature characteristics of the drain current.•Estimation of the density of trap states for the organic TFTs.
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关键词
Thin-film transistor (TFT),Drain current model,Temperature characteristics,Trap states
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