Preparation, electronic structure and optical properties of Na2GeSe3 crystals

D. Bletskan,V. V. Vakulchak, I. L. Mykaylo, O. A. Mykaylo

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS(2022)

引用 0|浏览0
暂无评分
摘要
From the first principles, in the framework of the density functional theory in LDA and LDA+U approximations, the band structure, total and partial densities of electronic states, spatial distribution of the electron charge density, also the optical functions: dielectric constant, refractive and absorption indices, reflection and absorption coefficients of Na2GeSe3 crystal have been calculated. According to the calculation results, Na(2)GeSe(3 )is a direct-gap crystal with the top of valence band and the bottom of conduction band at the point Gamma of Brillouin zone. The calculated band gap is E-gd = 1.7 eV LDA and E-gd = 2.6 eV in the LDA+U approximations. Based on the data of total and partial densities of electronic states, contributions of atomic orbitals to the crystalline ones have been determined. Also, the data of chemical bond formation in the crystals under discussion have been obtained.
更多
查看译文
关键词
crystal structure, crystal growth, computer simulation, electronic structure, absorption edge, optical functions
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要