A 300-GHz Low-Noise Amplifier in 130-nm SiGe SG13G3 Technology

Ahmed Gadallah,Mohamed Hussein Eissa,Thomas Mausolf,Dietmar Kissinger,Andrea Malignaggi

IEEE Microwave and Wireless Components Letters（2022）

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摘要

This work presents a 300-GHz low-noise amplifier (LNA) in a SiGe:C 130-nm BiCMOS technology, featuring $f_{t}/f_{\text {max}}$ of 470/700 GHz. The designed amplifier uses three cascaded stages in a pseudo-differential cascode topology with input and output baluns facilitating single-ended measurements. The first stage is matc...

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关键词

Wireless communication,Noise measurement,Frequency measurement,Silicon germanium,Gain,Transmission line measurements,BiCMOS integrated circuits

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