Few-layered MoS2 with S-vacancies anchored on N-doped carbon flower for high performance sodium storage

•The NCF@V-MoS2 prepared by hydrothermal and chemical etching strategy.•The introduction of S-vacancy improves conductivity and enlarges d-spacing of MoS2.•The NCF@V-MoS2 yields excellent rate performance and cycling stability.•The work proposes a novel design strategy of anode material for high-performance SIB.