High-Performance InGaAs HEMTs on Si Substrates for RF Applications

In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (I-D,I-max) of 569 mA/mm, and the maximum extrinsic transconductance (g(m,max)) of 1112 mS/mm. The current gain cutoff frequency (f(T)) is as high as 273 GHz and the maximum oscillation frequency (f(MAX)) reaches 290 GHz. To the best of our knowledge, the g(m,max) and the f(T) of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.