Enhanced thickness uniformity of large-scale alpha-Ga2O3 epilayers grown by vertical hot-wall mist chemical vapor deposition

Smooth surface morphology and high thickness uniformity heteroepitaxy of corundum-structured (alpha-) gallium oxide (Ga2O3) crystalline thin films on 100-mm diameter c-plane sapphire substrates were successfully demonstrated using vertical hot-wall mist chemical vapor deposition (CVD). The growth rate and surface morphology of the epitaxial layers were numerically and experimentally found to be dependent on the diameter of the precursor-diluted microdroplets approaching the substrate surface. Since the microdroplet is gradually evaporated while traveling through the furnace, the growth variables such as temperature, mist-flow velocity, and substrate position were tuned to obtain a suitable diameter of microdroplets approaching the substrate. In this study, the diameter of the approaching microdroplet was approximate to 2 mu m, which was optimal for the smooth surface (root mean square roughness approximate to 1 nm) of alpha-Ga2O3 epitaxial layers with a growth rate of approximate to 230 nm/h. Due to the even flow of mist in the vertical furnace, high thickness uniformity of the alpha-Ga2O3 epitaxial layer is guaranteed on large-scale substrates, with a standard deviation of thickness as small as 28 nm, paving the way for highly reliable Ga2O3-based electric and optoelectronic devices.