Injection- and Temperature-Dependence of Type-II 1.2-1.3 mu m (GaIn)As/Ga(AsSb) "W"-Lasers

Dominic A. Duffy,Igor P. Marko,Christian Fuchs,Timothy D. Eales,Jannik Lehr,Wolfgang Stolz,Stephen J. Sweeney

27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)（2021）

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摘要

Type-II (GaIn)As/Ga(AsSb) "W"-lasers offer the possibility to develop efficient and thermally stable near-infrared lasers. In this work, we investigate the temperature- and injection-dependent properties of "W"-lasers operating between 1200-1260 nm and use this to quantify the influence of radiative and non-radiative recombination on device performance.

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