Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

H. Sanchez-Martin,I. Iniguez-de-la-Torre,S. Garcia-Sanchez,J. Mateos,T. Gonzalez

Solid-State Electronics（2022）

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摘要

•A Monte Carlo device simulator coupled with thermal algorithms was calibrated to reproduce measurements of HEMTs.•Monte Carlo simulations are able to reproduce the general trend of the small-signal equivalent circuit parameters.•Gate-to-source capacitance is found to be decreased due to heating effects.•Heat conduction equation allows to identify the exact location of the hotspots below the transistor gate.

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关键词

AlGaN/GaN HEMT,Monte Carlo,Thermal effects,Thermal resistance,Heat-conduction equation,Small-signal equivalent circuit

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