Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures

Yi Han,Fengben Xi,Frederic Allibert,Ionut Radu,Slawomir Prucnal,Jin-Hee Bae,Susanne Hoffmann-Eifert,Joachim Knoch,Detlev Gruetzmacher,Qing-Tai Zhao

Solid-State Electronics（2022）

引用 5|浏览17

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摘要

•SOI UTBB nMOSFETs are operated at cryogenic temperature with different gate lengths.•The impact of the back-gate on the device performance is systematically studied.•A good performance of devices is obtained at cryogenic temperature by back-gate.•Short channel effects are investigated at cryogenic temperature.

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关键词

cryo-CMOS,Ultrathin body and BOX (UTBB),Fully depleted silicon-on-insulator (FD-SOI),Cryogenic electronics,Quantum computing,Back-gate

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