Improving NV centre density during diamond growth by CVD process using N2O gas

Nitrogen-vacancy (NV) centres in diamond are point-like defects that have attracted a lot of attention as promising candidates for quantum technologies particularly for sensing and imaging nanoscale magnetic fields. For this application, the use of a high NV density within a high-quality diamond layer is of prime interest. In previous works, it has been demonstrated that in situ doping with N2O rather than N-2 during chemical vapour deposition (CVD), limits the formation of macroscopic defects and improves NV's photostability. In this work, we focus on the optimization of the CVD growth conditions to obtain a high NV density keeping a constant N2O concentration in the gas phase (100 ppm). For this purpose, freestanding CVD layers are prepared varying two main growth parameters: methane content and substrate temperature. High energy electron irradiation followed by annealing is finally carried out in order to increase the NV yield through partial conversion of N impurities. Defect concentrations and spin properties are investigated. We find that growth under lower methane concentrations and lower temperatures enhances NV doping. NV ensembles with a density of the order of 2 ppm are finally obtained with narrow spin resonance linewidth. In addition, higher annealing temperatures of 1200 degrees C following irradiation are found to efficiently remove defects thus improving spin properties.