Morphological evolution of silicon ablated via nanosecond pulsed laser

In order to explore the laws and mechanisms of the microstructure and ablation of silicons irradiated via nanosecond pulsed lasers, a nanosecond laser with a wavelength of 1064 nm was used to irradiate intrinsic silicon and p-type, boron-doped silicon targets. The irradiated morphology of the silicons under different laser conditions was investigated, and the influence of laser energy density, pulse number, incident angle, and target thickness on the cleavage and ablation morphology was analyzed. This study can provide a basis for laser precision machining as well as for understanding the resistance of silicon-based devices to laser damage.