Epitaxial growth of highly-aligned MoS2 on c-plane sapphire

Lulu Kang,Dewei Tian,Lan Meng,Ming Du,Wei Yan,Zhaoshun Meng,Xing-ao Li

Surface Science（2022）

引用 4|浏览12

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摘要

•Epitaxial growth of highly-aligned molybdenum disulfide (MoS2) on c-plane sapphire via chemical vapor deposition.•Coupling between sapphire step edges and MoS2 zigzag edges gives rise to epitaxial growth.•The morphology of aligned MoS2 flakes shows great growth temperature.

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关键词

Two-dimensional materials,Transition metal dichalcogenides,Aligned growth,MoS2,Chemical vapor deposition

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