Conformal atomic layer etching for Ge based on sacrificial oxide with higher Gibbs free energy of formation

Chen-Hsiang Ling,Chun-Yi Chou,Tsai-Fu Chung,Jing-Jong Shyue,Jer-Ren Yang,Miin-Jang Chen

Surfaces and Interfaces（2022）

引用 0|浏览9

暂无评分

摘要

•Self-limiting, self-stop, damage-free, layer-by-layer, and conformal etching of Ge.•Precise etching rate of a few Å per cALE cycle along with damage-free surface of Ge.•Sacrificial TiO2 layer leads to higher etching rate due to higher Gibbs free energy.

查看译文

关键词

Atomic layer etching,Atomic layer deposition,Damage-free etching,Three-dimensional conformal etching

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要