Thin films of thermoelectric Mg2Sn containing nano-sized metal Sn phase by magnetron sputtering

Mg2Sn films with nano-sized metal Sn phase were prepared by magnetron sputtering. The nano-sized metal Sn phase in films gradually increased with increasing single sputtering time on alloy target. The carrier concentration increased and the carrier mobility first decreased and then slightly increased with increasing nano-sized metal Sn phase. The resistivity and Seebeck coefficient all exhibited a trend of first increasing and then decreasing with the increase of nano-sized metal Sn phase. The Seebeck coefficient greatly increases due to existing moderate nano-sized secondary phase. It is beneficial to increase the power factor that the cubic Mg2Sn thin films contain an appropriate amount of conductive nano-sized metal Sn phase.