Large-area monoPoly solar cells on 110 mu m thin c-Si wafers with a rear n(+)poly-Si/SiOx stack deposited by inline plasma-enhanced chemical vapour deposition

We present an overview of SERIS' monoPoly technology on screen-printed, M2-size (244.4 cm(2)) n-type bifacial silicon solar cells with a rear n(+):poly-Si/SiOx passivating contact stack, where the SiOx and n(+):poly-Si layers are fabricated by single-side inline plasma-enhanced chemical vapour deposition (PECVD). We demonstrate the application of these stacks on thin (similar to 110 mu m) silicon wafers, giving an excellent open-circuit voltage of 707 mV and an externally verified cell efficiency of 23.2% using commercial screen-printed and fire-through metal pastes. A detailed power analysis is presented, with a breakdown of the voltage and current losses. Finally, we share the progress on standard wafers with an efficiency of 23.8% achieved and present the outlook for this technology with a selective passivating contact stack at the front and a full-area passivating contact stack at the rear.