A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

Yiren Chen,Zhiwei Zhang,Guoqing Miao,Hong Jiang,Hang Song

Materials Letters（2022）

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摘要

•A double-sided incident planar InGaAs/InP APD is fabricated by a single diffusion.•The mechanism involved in the different performance of two modes is clarified.•A comparative study provides an efficient guidance for device applications.

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关键词

Epitaxial growth,Diffusion,Sensors,Semiconducting III-V materials,Avalanche photodiodes

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