A self-powered solar-blind photodetector based on polyaniline/alpha-Ga2O3 p-n heterojunction

In this work, we demonstrated the self-powered solar-blind photodetector based on a polyaniline/alpha-Ga2O3 hybrid heterojunction. The resultant device exhibited distinct self-power characteristics with a peak photoresponsivity (R) of 8.2 mA/W, a UVC (UV light of wavelength range at 200-280 nm)/UVA (UV light of wavelength range at 320-400 nm) rejection ratio (R-220nm/R-400 nm) of 2.97 x 10(4), and a response decay time (tau(dec)) of 176 ls at zero bias. With an elevated bias to 5V, the dark current remained in an ultralow level of 0.21 pA, while the rejection ratio and tau(dec) were improved to be 7.13 x 10(4) and 153 ls, respectively, together with the corresponding external quantum efficiency of 38.4% and a detectivity of 6.63 x 10(13) Jones. Thanks to the dual functions of bandpass transmission in the deep-ultraviolet spectral region and the hole spreading transport of the polyaniline layer, the responsivity to the visible light is suppressed with the negligible internal photoemission effect, thus leading to the improved rejection ratio. Furthermore, weak interface interactions in such polyaniline/alpha-Ga2O3 organic-inorganic hybrid systems avoid the introduction of interfacial trapping centers by lattice mismatch and the stabilization of negatively charged anions (O-2(-)) by (-NH2)-(+)species in polyaniline deactivate oxygen vacancies at the alpha-Ga2O3 surface, both of which lead to the negligible persistent photoconductivity effect. As a result, in the aid of the interfacial built-in field, the constructed hybrid heterojunction exhibited a self-powered detecting characteristic and a fast response speed. These findings verify the feasibility of delivering high performance photodetectors by implementing the inorganic/organic hybrid bipolar device design to overcome the difficulty in p-type Ga2O3. Published under an exclusive license by AIP Publishing.