Formation of Luminescent Structures in Thin a-Si:H–Er Films Irradiated by Femtosecond Laser Pulses

The process of intcorporation of erbium into silicon in a multilayer film consisting of Er and a-Si:H layers irradiated by femtosecond laser pulses is studied. The effect of the energy density of laser radiation on the phase composition and on the photoluminescence signal intensity from exposed regions is analyzed. The methods of thermal and femtosecond laser doping of films are compared. The results can be useful for the development of promising optoelectronic devices based on Si:Er structures.