DLTS investigations on CIGS solar cells from an inline co-evaporation system with RbF post-deposition treatment

In this study, Deep Level Transient Spectroscopy (DLTS) measurements have been performed on Cu (In,Ga)Se-2 (GIGS) solar cells from an inline co-evaporation system. The focus of this investigation is directed on the effect of rubidium-fluoride (RbF)-post-deposition treatment (PDT) on the defects in the CIGS absorber layer. Different traps can be identified and their properties are calculated. Herein, different methods of evaluations have been used to verify the results. Specifically, one minority trap around 400 meV was found to show a significant reduction of the trap density due to the alkali treatment. In contrast, a majority trap at approximately 600 meV is unaffected.