Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment
IEEE Transactions on Electron Devices（2022）
关键词
Amorphous indium-gallium-zinc oxide (a-IGZO),hot-carrier stress (HCS),moist environment,positive bias stress (PBS),thin-film transistor (TFT)
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