Design of Energy Router Based on SiC MOSFET/ SI IGBT Hybrid Device

2021 IEEE 1st International Power Electronics and Application Symposium (PEAS)(2021)

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摘要
Power electronic devices are the key factors to determine the performance and reliability of energy routers. However, it is difficult for pure Si IGBT and SiC MOSFET to meet the requirements in efficiency, cost, capacity and reliability. In order to effectively solve these problems, this paper based on the Si IGBT/SiC MOSFET hybrid device which is composed of large capacity Si IGBT and small capacity SiC MOSFET in parallel, combined with the high-performance predictive control strategy, designed a multi-port digital energy router which can meet the harsh requirements under the new situation. The experimental results show the feasibility of the design scheme.
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关键词
Hybrid device,Silicon carbide MOSFET,Silicon IGBT,Multi-port Energy router
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